Sökning: "Si SiGe"

Visar resultat 1 - 5 av 29 avhandlingar innehållade orden Si SiGe.

  1. 1. Near-infrared photodetectors based on Si/SiGe nanostructures

    Detta är en avhandling från Institutionen för fysik, kemi och biologi

    Författare :Anders Elfving; Wei-Xin Ni; Thomas P. Pearsall; [2006]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; SiGe; Ge dots; nanostructures; molecular beam epitaxy; photodetector; NATURAL SCIENCES Physics Condensed matter physics Semiconductor physics; NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik;

    Sammanfattning : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. LÄS MER

  2. 2. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Ming Zhao; Wei-Xin Ni; Göran Hansson; Kang L. Wang; [2008]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Si SiGe; Strain engineering; Molecular beam epitaxy; THz; Quantum cascade; Strain relaxation; TECHNOLOGY Materials science; TEKNIKVETENSKAP Teknisk materialvetenskap;

    Sammanfattning : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. LÄS MER

  3. 3. UHV-CVD growth of Ge/Si nanostructures

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Vilma Zela; [2006]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; Fysik; Physics; Naturvetenskap; Si; Ge; Esaki diode; Halvledarfysik; Ge layer; Natural science; Ge Ilands; posiotioning;

    Sammanfattning : This thesis is based on the results concerning the epitaxial growth and characterization of silicon (Si) and germanium (Ge) nanostructures. The growth technique was the Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) that works in relatively low temperatures and low growth pressures. LÄS MER

  4. 4. Dopant diffusion in Si and SiGe

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Jens S. Christensen; [2004]
    Nyckelord :condensed matter;

    Sammanfattning : Dopant diffusion in semiconductors is an interestingphenomenon from both technological and scientific points ofview. Firstly, dopant diffusion is taking place during most ofthe steps in electronic device fabrication and, secondly,diffusion is related to fundamental properties of thesemiconductor, often controlled by intrinsic point defects:self-interstitials and vacancies. LÄS MER

  5. 5. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

    Detta är en avhandling från Stockholm : KTH

    Författare :Martin von Haartman; Mikael Östling; Cor Claeys; [2006]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; SOI; SiGe; strain; high-k; metal gate; 1 f noise; low-frequency noise; mobility fluctuations; phonons; number fluctuations; traps; buried channel; mobility; substrate bias; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik;

    Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER