Sökning: "Si SiGe"

Visar resultat 1 - 5 av 33 avhandlingar innehållade orden Si SiGe.

1. 1. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures

   Författare :Chun-Xia Du; Fransesco Priolo; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; electroluminescence; diode; transistor; hot electron; recombination; excitation; de-excitation; Auger effect; molecular beam epitaxy; Er; Si; SiGe;

   Sammanfattning : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. LÄS MER

3. 2. Near-infrared photodetectors based on Si/SiGe nanostructures

   Författare :Anders Elfving; Wei-Xin Ni; Thomas P. Pearsall; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; SiGe; Ge dots; nanostructures; molecular beam epitaxy; photodetector; Semiconductor physics; Halvledarfysik;

   Sammanfattning : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. LÄS MER

4. 3. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy

   Författare :Ming Zhao; Wei-Xin Ni; Göran Hansson; Kang L. Wang; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Si SiGe; Strain engineering; Molecular beam epitaxy; THz; Quantum cascade; Strain relaxation; Materials science; Teknisk materialvetenskap;

   Sammanfattning : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. LÄS MER

5. 4. UHV-CVD growth of Ge/Si nanostructures

   Författare :Vilma Zela; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; Fysik; Physics; Naturvetenskap; Si; Ge; Esaki diode; Halvledarfysik; Ge layer; Natural science; Ge Ilands; posiotioning;

   Sammanfattning : This thesis is based on the results concerning the epitaxial growth and characterization of silicon (Si) and germanium (Ge) nanostructures. The growth technique was the Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) that works in relatively low temperatures and low growth pressures. LÄS MER

7. 5. Dopant diffusion in Si and SiGe

   Författare :Jens S. Christensen; KTH; []
   Nyckelord :condensed matter;

   Sammanfattning : Dopant diffusion in semiconductors is an interestingphenomenon from both technological and scientific points ofview. Firstly, dopant diffusion is taking place during most ofthe steps in electronic device fabrication and, secondly,diffusion is related to fundamental properties of thesemiconductor, often controlled by intrinsic point defects:self-interstitials and vacancies. LÄS MER