Sökning: "GaN-AlGaN"
Hittade 5 avhandlingar innehållade ordet GaN-AlGaN.
1. Cathodoluminescence Studies of Quantum Structures and III-V nitrides
Sammanfattning : Characterization of low-dimensional semiconductor structures is a challenging task. The thesis is based on experiments, using cathodoluminescence (CL) as a tool for characterization. The high spatial resolution and the possibility of spectroscopy of small structures make CL one of the most powerful techniques for these types of investigations. LÄS MER
2. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy
Sammanfattning : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. LÄS MER
3. Photoluminescence studies of the electronic structure in some III-V quantum structures
Sammanfattning : Semiconductor compound materials from groups III and V in the periodic table have attracted much interest during recent years, due to promising properties for optoelectronic devices such as lasers and light emitting diodes. Most of these devices are fabricated from quantum well (QW) structures. LÄS MER
4. Buffer Related Dispersive Effects in Microwave GaN HEMTs
Sammanfattning : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. LÄS MER
5. High-speed optical modulators based on intersubband transitions
Sammanfattning : Optical modulators are essential components in high speedoptical communication. They are employed to circumvent theinherent speed limitations of direct modulated semiconductorlasers, and may also extend the transmission distance onoptical fibers by providing optical pulses with lowerchirp. LÄS MER