Sökning: "SCE"

Visar resultat 11 - 11 av 11 avhandlingar innehållade ordet SCE.

1. 11. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

   Författare :Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

   Sammanfattning : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. LÄS MER