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Visar resultat 1 - 5 av 7 avhandlingar som matchar ovanstående sökkriterier.
1. Microwave and Millimeter-Wave Monolithic Integrated Circuits in CMOS and GaAs-mHEMT Technologies
Sammanfattning : The objective of this work has been to design and characterize microwave and millimeter-wave components and circuits within a 90 nm Si-CMOS process and a 100 nm GaAs-mHEMT process. The work is divided in two parts depending on the technology. LÄS MER
2. Selected Applications of Switched Capacitor Circuits : RF N-Path Filters and ΣΔ Modulators
Sammanfattning : Electronic circuits based on switches and capacitors have been used in various applications for several decades. The common switched capacitor (SC) circuits have made their career primarily in analog filters and data converters due to high immunity to capacitance mismatch in integrated circuit (IC) technologies. LÄS MER
3. THz Vector Beam Measurement System for APEX Instrument SHeFI and Microwave Cryogenic Low Noise Amplifier Design
Sammanfattning : This licentiate thesis describes results of the author’s work on development of THz vector beam measurement system and microwave cryogenic low-noise amplifier.The first part, and the main focus, of the thesis covers the vector beam measurement system for frequency range 210-500 GHz developed to characterize/verify the cold opticsof the APEX instrument SHeFI. LÄS MER
4. Wideband THz Mixers and Components for the Next Generation of Receivers for Radioastronomy
Sammanfattning : In recent decades, there has been a growing interest in THz research, leading to substantial improvements in technology and the emergence of new applications. In particular, the ever-evolving field of radio astronomy instrumentation has been pushing the limits of millimeter and sub-millimeter technology boundaries, redefining the state-of-the-art for wideband low-noise receivers. LÄS MER
5. Characterisation and Modelling of Graphene FETs for Terahertz Mixers and Detectors
Sammanfattning : Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to its exciting properties. In particular, ultrahigh-speed graphene field effect transistors (GFETs) are possible due to the unprecedented carrier velocities in ideal graphene. LÄS MER