Sökning: "100 nm mHEMT technology"

Hittade 3 avhandlingar innehållade orden 100 nm mHEMT technology.

  1. 1. Microwave and Millimeter-Wave Monolithic Integrated Circuits in CMOS and GaAs-mHEMT Technologies

    Författare :Bahar M. Motlagh; [2008]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; power divider; double-slot antenna; 60 GHz; millimeter-wave; GaAs-mHEMT; CMOS integrated circuits; antenna integration; noise measurement; 100 nm mHEMT technology; balun; capacitor; microstrip line; single-ended; 90 nm CMOS technology; single-balanced; resistive mixer; 210 GHz;

    Sammanfattning : The objective of this work has been to design and characterize microwave and millimeter-wave components and circuits within a 90 nm Si-CMOS process and a 100 nm GaAs-mHEMT process. The work is divided in two parts depending on the technology. LÄS MER

  2. 2. Millimeter and Sub-Millimeter Wave Integrated Active Frequency Down-Converters

    Författare :Yu Yan; [2015]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 145 GHz; self-oscillating mixer; mixer; conversion gain; millimeter wave; radar; mHEMT; noise figure; monolithic; sub-millimeter wave; InP; THz; resistive mixer; Gilbert mixer; DHBT; SiGe; 340 GHz; 220 GHz; FMCW; transconductance mixer; BiCMOS; transceiver; harmonic; GaAs;

    Sammanfattning : In recent years, the increasing amount of data transmission, the need for automotiveradars, and standoff imaging for security applications are the main factors that accelerateresearch in the millimeter and sub-millimeter wave frequency ranges. The semiconductorindustries have continuously developed their processes, which have opened upopportunities for manufacturing monolithically integrated circuits up to a few hundredGHz, based on transistor technologies. LÄS MER

  3. 3. Microwave and millimeter wave CMOS Characterization, modeling, and design

    Författare :Mattias Ferndahl; [2008]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; load-pull; microwave; large-signal; silicon; characterization; modeling; balun; LSNA; frequency doubler; millimeter wave; power amplifier; CMOS;

    Sammanfattning : The use of CMOS technologies for microwave and millimeter wave applications has recently been made possible as a result of increased transistor performance. The fT and fmax have, for example, passed 100 GHz at the 130 nm node and 200 GHz at the 65 nm node. LÄS MER