Sökning: "silicon nanowire"

Visar resultat 26 - 30 av 46 avhandlingar innehållade orden silicon nanowire.

1. 26. Silicon Nanowires for Biomolecule Detection

   Författare :Niklas Elfström; Jan Linnros; Mark Reed; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Material physics with surface physics; Materialfysik med ytfysik;

   Sammanfattning : Starting from silicon on insulator (SOI) material, with a top silicon layer thickness of 100 nm, silicon nanowires were fabricated in a top down approach using electron beam (e-beam) lithography and subsequent eactive ion etching (RIE) and oxidation. Nanowires as narrow as 30 nm could be achieved. LÄS MER

3. 27. Radio Frequency InGaAs MOSFETs

   Författare :Navya Sri Garigapati; NanoLund: Centre for Nanoscience; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V compound semiconductor; InGaAs MOSFET; Quantum well; Nanowire; Radio Frequency; Band structure calculation; k.p calculations; Strain engineering; ballistic electron transport; S-parameters;

   Sammanfattning : III-V-based Indium gallium arsenide is a promising channel material for high-frequency applications due to its superior electron mobility property. In this thesis, InGaAs/InP heterostructure radio frequency MOSFETs are designed, fabricated, and characterized. LÄS MER

4. 28. Magnetotransport Studies of Mn Ion-Implanted Nanowires

   Författare :Waldomiro Paschoal; Linnaeus University; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; hopping conduction; ferromagnetism; ion-implantation; Nanowire; GaMnAs; magnetoresistance; Fysicumarkivet A:2014:Paschoal;

   Sammanfattning : This thesis focuses on the magnetotransport properties of highly Mn-doped crystalline GaAs nanowires. The GaAs nanowires were first grown by metal-organic vapor phase epitaxy from gold seed particles, and subsequently implanted with Mn ions under varying conditions, e.g., ion fluence and acceleration voltage. LÄS MER

5. 29. III-V Devices for Emerging Electronic Applications

   Författare :Patrik Olausson; NanoLund: Centre for Nanoscience; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy;

   Sammanfattning : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. LÄS MER

7. 30. Applications of Si1-xGex alloys for Ge devices and monolithic 3D integration

   Författare :Konstantinos Garidis; Per-Erik Hellström; Mikael Östling; Sten Vollebregt; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon; germanium; epitaxy; selective; pn junction; germanium on insulator; GOI; Ge PFET; bonding; monolithic; sequential; three dimensional; 3D; low temperature; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : As the semiconductor industry moves beyond the 10 nm node, power consumption constraints and reduction of the negative impact of parasitic elements become important. Silicon germanium (Si1−xGex) alloys have been used to amplify the performance of Si based devices and integrated circuits (ICs) for decades. LÄS MER