Sökning: "mobility silicon carbide"
Visar resultat 16 - 19 av 19 avhandlingar innehållade orden mobility silicon carbide.
16. Electronic properties of intrinsic defects and impurities in GaN
Sammanfattning : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. LÄS MER
17. Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces
Sammanfattning : The superior electronic and mechanical properties of Graphene have promoted graphene to become one of the most promising candidates for next generation of electronic devices. Epitaxial growth of graphene by sublimation of Si from Silicon Carbide (SiC) substrates avoids the hazardous transfer process for large scale fabrication of graphene based electronic devices. LÄS MER
18. Growth of 3C-SiC and Graphene for Solar Water-Splitting Application
Sammanfattning : Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H- or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si–C bilayers along the c-axis crystal direction. LÄS MER
19. Epitaxial Growth and Characterization of SiC for High Power Devices
Sammanfattning : Silicon Carbide (SiC) is a semiconductor with a set of superior properties, including wide bandgap, high thermal conductivity, high critical electric field and high electron mobility. This makes it an excellent material for unipolar and bipolar electronic device applications that can operate under high temperature and high power conditions. LÄS MER
