Sökning: "mobility silicon carbide"

Visar resultat 11 - 15 av 19 avhandlingar innehållade orden mobility silicon carbide.

1. 11. P-type and polarization doping of GaN in hot-wall MOCVD

   Författare :Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zhaoxia Bi; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : The devolopment of group-III nitride semiconductor technology continues to expand rapidly over the last two decades. The indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with a wide bandgap range, spanning from infrared(IR) to deep-ultraviolet (UV), enabling their utilization in optoelectronic industry. LÄS MER

3. 12. Sublimation Growth of 3C-SiC : From Thick Layers to Bulk Material

   Författare :Valdas Jokubavičius; Mikael Syväjärvi; Rositsa Yakimova; Didier Chaussende; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Silicon carbide (SiC) is a semiconductor material which holds high promises for various device applications. It can be obtained in different crystal structures called polytypes. The most common ones are hexagonal (6H- and 4H-SiC) and cubic (3C-SiC) silicon carbide. LÄS MER

4. 13. Characterization of dielectric layers for passivation of 4H-SiC devices

   Författare :Maciej Wolborski; Anders Hallén; Lothar Frey; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrophysics; Elektrofysik;

   Sammanfattning : Silicon carbide rectifiers and MESFET switches are commercially available since 2001 and 2005 respectively. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance, four inch wafers are available and the next step of technology is set to be the six inch substrate wafers. LÄS MER

5. 14. Structural and Electronic Properties of Graphene on 4H- and 3C-SiC

   Författare :Chamseddine Bouhafs; Vanya Darakchieva; Rozitsa Yakimova; Ivan Gueorguiev Ivanov; Jacek Baranowski; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Graphene is a one-atom-tick carbon layer arranged in a honeycomb lattice. Graphene was first experimentally demonstrated by Andre Geim and Konstantin Novoselov in 2004 using mechanical exfoliation of highly oriented pyrolytic graphite (exfoliated graphene flakes), for which they received the Nobel Prize in Physics in 2010. LÄS MER

7. 15. Growth of Wide-Band Gap AlN and (SiC)x(AlN)1-x Thin Films by Reactive Magnetron Sputter Deposition

   Författare :Sukkaneste Tungasmita; Gregory W. Auner; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : The research presented in this thesis is focused on thin film synthesis of epitaxial wurtzite structure aluminum nitride (AlN) and related alloy, (SiC)x(AlN)1-x,by ultra-high-vacuum (UHV) reactive magnetron sputter deposition, on silicon carbide (6H-SiC) substrates. The emphasis of the work is on controlling the growth and quality of the films to be able to use the materials in electronic device applications. LÄS MER