Sökning: "low temperature MBE"

Visar resultat 11 - 15 av 15 avhandlingar innehållade orden low temperature MBE.

1. 11. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy

   Författare :Ming Zhao; Wei-Xin Ni; Göran Hansson; Kang L. Wang; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Si SiGe; Strain engineering; Molecular beam epitaxy; THz; Quantum cascade; Strain relaxation; Materials science; Teknisk materialvetenskap;

   Sammanfattning : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. LÄS MER

3. 12. Novel Materials and Technologies for IR Optoelectronic Applications

   Författare :Yuxin Song; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; GaSbBi; dilute bismide; InAs GaSb type-II superlattice; metamorphic; InSbBi; alloy graded buffer; threading dislocation; infrared; molecular beam epitaxy;

   Sammanfattning : This thesis focuses on novel III-V materials (InAs/GaSb type-II superlattices, T2SL, and dilute bismides) and metamorphic growth techniques for infrared optoelectronics all of which may find wide spread applications in telecommunication, energy harvesting and saving, sensing and imaging. Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) photodetectors at the atmospheric windows of 3-5 and 8-12 µm, respectively, are currently dominated by HgCdTe and quantum well infrared photodetectors. LÄS MER

4. 13. Si-based structures for light emission and detection

   Författare :Amir Karim; Göran Hansson; Wei-Xin Ni; Tom Gregorkiewicz; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Physics; Fysik;

   Sammanfattning : Efforts to improve the optical performance of the indirect bandgap semiconductor silicon (Si) has been a major subject of research in the field of Si photonics due to the promising applications of Si based light emitters and detectors for optical communication. With that motivation three different Si based material systems were investigated; Si:Er/O layered structures, SiGe quantum dots and SiSn nano structures, all grown using the technique of molecular beam epitaxy (MBE). LÄS MER

5. 14. Magnetron Sputter Epitaxy of GaN Epilayers and Nanorods

   Författare :Muhammad Junaid; Jens Birch; Lars Hultman; K. Scott Butcher; Linköpings universitet; []
   Nyckelord :;

   Sammanfattning : In this research, electronic-grade GaN(0001) epilayers and nanorods have been grown onto Al2O3(0001) and Si(111) substrates, respectively, by reactive magnetron sputter epitaxy (MSE) using liquid Ga as a sputtering target. MSE, employing ultra high vacuum conditions, high-purity source materials, and lowenergy ion assisted deposition from substrate biasing, is a scalable method, lending itself to large area GaN synthesis. LÄS MER

7. 15. STM studies of epitaxial overlayers formed by metal deposition : Mo on MgO, Ni on SiC and Sn on Si

   Författare :Thorbjörn Jemander; Linköpings universitet; []
   Nyckelord :;

   Sammanfattning : Magnetron sputtering and molecular beam epitaxy (MBE) have been used to deposit metallic overlayers on semiconducting and insulating materials such as Mo on MgO, Ni on SiC(0001) and Sn on Si(111). The layers have been annealed and characterized with scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), low energy electron diffration (LEED), refiecti ve high energy electron diffraction (RHEED) and atomic force microscopy (AFM). LÄS MER