Sökning: "low temperature MBE"
Visar resultat 6 - 10 av 15 avhandlingar innehållade orden low temperature MBE.
6. Detailed photoemission studies of the prototype diluted magnetic semiconductor (Ga,Mn)As
Sammanfattning : Magnetic semiconductors are materials that combine the key features needed in information technology, namely magnetism and controllable charge transport. The prospects of integrating these properties and of using the spin as informa-tion carrier have motivated large efforts to produce such materials for imple-mentation in future spin-based electronics. LÄS MER
7. MBE growth of Si-based heterostructures for optoelectronic applications
Sammanfattning : Molecular beam epitaxy (MBE) is a powerful technique used to grow semiconductor crystalline Jayers at low (200°C - 900 °C) temperature. In this study we report on the growth of silicon-based materials used for their electronic and optical properties. Parts of the work have involved alloys of silicon (Si) with germanium (Ge) or carbon (C). LÄS MER
8. Efficient 1.3 mm GaInNAs Quantum Well Lasers for Uncooled, High Speed Operation
Sammanfattning : The rapid expansion of tele and data transmission systems requires an ever increasing capacity in modern optical fibre communication networks. With the implementation of short distance, high density networks, such as access networks, there is a need for cost-effective optical transmitters compatible with single mode fibres. LÄS MER
9. Synchrotron light based spectroscopy of MBE-grown (GaMn)As structures
Sammanfattning : Structures based on the diluted magnetic semiconductor (GaMn)As have been grown by low temperature molecular beam epitaxy and studied using synchrotron radiation based electron spectroscopy. An investigation of modifications due to in situ low temperature annealing under amorphous As capping has been performed. LÄS MER
10. Annealing Induced Modifications in (GaMn)As: Electron Spectroscopic Studies
Sammanfattning : By incorporating magnetism into semiconductors, it may possibly be viable to enhance the functionality of materials. An exceptionally appealing material in this context is GaAs, which can be doped with Mn atoms. (GaMn)As has fascinated research community as a promising candidate for spintronic application. LÄS MER