Sökning: "leakage current measurements"

Visar resultat 31 - 35 av 36 avhandlingar innehållade orden leakage current measurements.

  1. 31. Time-resolved optical characterisation of defect-rich semiconductors

    Författare :Andreas Gaarder; KTH; []
    Nyckelord :;

    Sammanfattning : This thesis explores carrier trapping and recombination indefect-rich semiconductors, and methods for materialcharacterisation. Optimal manufacturing parameters areestablished for materials to be used in the ultrafast devicesneeded for future telecommunication applications. LÄS MER

  3. 32. Matrix and interface effects on microcracking in polymer composites

    Författare :Anders Sjögren; Luleå tekniska universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Polymera konstruktionsmaterial; Polymeric Composite Materials;

    Sammanfattning : An underlying industrial problem for the present work is leakage of pressure vessels. Fluid leakage was confirmed to take place along a path of connected microcracks and delaminations. The thesis is concerned with the micromechanisms for microcracking studied by in-situ optical microscopy of cross-ply laminates. LÄS MER

  4. 33. Design and characterization of 64K pixels chips working in single photon processing mode

    Författare :Xavier Llopart Cudié; Christer Fröjdh; Michael Campbell; Mittuniversitetet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; Elektronik;

    Sammanfattning : Progress in CMOS technology and in fine pitch bump bonding has made possible the development of high granularity single photon counting detectors for X-ray imaging. This thesis studies the design and characterization of three pulse processing chips with 65536 square pixels of 55 μm x 55 μm designed in a commercial 0. LÄS MER

  5. 34. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

    Författare :Martin von Haartman; Mikael Östling; Cor Claeys; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; SOI; SiGe; strain; high-k; metal gate; 1 f noise; low-frequency noise; mobility fluctuations; phonons; number fluctuations; traps; buried channel; mobility; substrate bias; Electronics; Elektronik;

    Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER

  7. 35. Design Space Exploration of Digital Circuits for Ultra-low Energy Dissipation

    Författare :Syed Muhammad Yasser Sherazi; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; ultra low-voltage; ultra low-energy; subthreshold sub-VT ; body biasing; pipelining; unfolding; half-band digital filter.;

    Sammanfattning : The ever expanding market of ultra portable electronic products is compelling the designer to invest major efforts in the development of small and low energy electronic devices. The driving force and benefactors of such devices are (but not limited to) e-health system, sensor network applications, security systems, environmental applications, and home automation systems. LÄS MER