Sökning: "leakage current measurements"
Visar resultat 26 - 30 av 36 avhandlingar innehållade orden leakage current measurements.
26. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications
Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER
27. Electron Transport in Quantum Dots Defined in Low-Dimensional Semiconductor Structures
Sammanfattning : This thesis focuses on electron transport in single and double quantum dots defined in low-dimensional, narrow-band-gap III-V semiconductor materials. Fabrication schemes are presented for defining single and double quantum dots in lateral InGaAs/InP heterostructures, either by a combination of etching and local gating or solely by local top gating. LÄS MER
28. On the supraharmonics in single-phase and three-phase installations
Sammanfattning : Society has increasingly started depending on the continuity of internet services, the interruption can be crucial for vital societal functions. It is therefore important to maintain continuous and reliable operations of e.g., installations housing sensitive IT (Information Technology) loads. LÄS MER
29. Wireless High-Temperature Monitoring of Power Semiconductors : A Single-Chip Approach
Sammanfattning : Because failures in power electronic equipment can cause production stops and unnecessary damage to interconnected equipment, monitoring schemes that are able to predict such failures provide various economic and safety benefits. The primary motivation for this thesis is that such monitoring schemes can increase the reliability of energy production plants. LÄS MER
30. Experimental and theoretical investigations of electron-waveguide devices
Sammanfattning : This thesis treats electron-waveguide devices bothexperimentally and theoretically. A fabrication method forelectron-waveguide devices with trench-isolated in plane gateswas developed in the In0.53Ga0.47As/InP material system. LÄS MER