Sökning: "hydrogen in silicon"

Visar resultat 6 - 10 av 57 avhandlingar innehållade orden hydrogen in silicon.

1. 6. Technology for photonic components in silica/silicon material structure

   Författare :Lech Wosinski; KTH; []
   Nyckelord :silica-on-silicon technology; PECVD; plasma deposition; photonic integrated circuits; planar waveguide devices; UV Bragg gratings; photosensitivity; arrayed waveguide gratings; multimode interference couplers; add-drop multiplexers;

   Sammanfattning : The main objectives of this thesis were to develop a lowtemperature PECVD process suitable for optoelectronicintegration, and to optimize silica glass composition forUV-induced modifications of a refractive index in PECVDfabricated planar devices. The most important achievement isthe successful development of a low temperature silicadeposition, which for the first time makes it is possible tofabricate good quality low loss integrated components whilekeeping the temperature below 250oC during the entirefabrication process. LÄS MER

3. 7. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors

   Författare :Martin Sandén; KTH; []
   Nyckelord :bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; polysilicon emitter; high-frequency measurement; low-frequency noise; noise modeling; hydrogen passivation; voltage controlled oscillator VCO ; pha;

   Sammanfattning : .... LÄS MER

4. 8. Silicon carbide field-effect devices studied as gas sensors for exhaust gas monitoring

   Författare :Peter Tobias; Ignaz Eisele; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; high temperature; gas sensors; field effect devices; MISdevices; Schottky diodes; experimental design; reaction kinetics; mass transport; car exhaust; multipoint injection; response times; cylinder specific; on-board diagnosis;

   Sammanfattning : Metal-insulator-silicon carbide (MIS) structures have been studied as gas sensors. We have investigated how the sensors detect gases, how fast they do that, and how they could be used for exhaust gas monitoring.We have prepared simple field-effect devices, MIS-capacitors and Schottky diodes, on silicon carbide with platinum gates. LÄS MER

5. 9. Chloride-based Silicon Carbide CVD

   Författare :Henrik Pedersen; Erik Janzén; Anne Henry; Yaroslav Koshka; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Kemi;

   Sammanfattning : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. LÄS MER

7. 10. Luminescence of Silicon Nanoparticles Synthesized by Ion Implantation

   Författare :Thawatchart Chulapakorn; Anders Hallén; Daniel Primetzhofer; Yanwen Zhang; Uppsala universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon nanoparticle; Photoluminescence; Ion beam synthesis; Ion beam analysis; Fysik; Physics;

   Sammanfattning : Silicon nanoparticles (SiNPs) have been shown to display luminescence in the visible range with a peak wavelength depending on the nanoparticle size. This finding is of potential interest for integration of optoelectronic devices in semiconductor technology. LÄS MER