Sökning: "hydrogen in silicon"

Visar resultat 21 - 25 av 57 avhandlingar innehållade orden hydrogen in silicon.

  1. 21. Advanced silicon photoelectrodes for water splitting devices : design, preparation and functional characterization by photo-electrochemistry and high-energy X-ray spectroscopy

    Författare :Anurag Y. Kawde; Johannes Messinger; Pieter Glatzel; Thomas Jaramillo; Umeå universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Photoelectrochemical cell; photoelectrodes; solar-water splitting; artificial photosynthesis; X-ray absorption and emission spectroscopy;

    Sammanfattning : For the last century, mankind has been hugely dependent on fossil fuels to meet its energy needs. Harnessing energy from fossil fuels led to the emission of greenhouse gases. Greenhouse gases such as CO2 are a major contributor to global warming. LÄS MER

  3. 22. Catalytic reactions and hydrogen sensing with Pt- and Pd-MIS devices

    Författare :Anette Salomonsson; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : The hydrogen sensitivity of catalytic metal-insulator-semiconductor (MIS) devices has been known for almost 30 years [1,2]. With Pd or Pt as the metal gate the electronic properties of the device are influenced by hydrogen and the device can thereby be used as a gas sensor for hydrogen and hydrogen containing gases. LÄS MER

  4. 23. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

    Författare :Johan Pejnefors; KTH; []
    Nyckelord :chemical vapor deposition CVD ; bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; epitaxy; poly-Si emitter; in situ doping; non-selective epitaxy NSEG ; loading effect; emissivity effect;

    Sammanfattning : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. LÄS MER

  5. 24. P-type and polarization doping of GaN in hot-wall MOCVD

    Författare :Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zhaoxia Bi; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The devolopment of group-III nitride semiconductor technology continues to expand rapidly over the last two decades. The indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with a wide bandgap range, spanning from infrared(IR) to deep-ultraviolet (UV), enabling their utilization in optoelectronic industry. LÄS MER

  7. 25. Copper germanide schottky contacts to silicon and electrically active defects in n-type 6H-SiC and 4H-SiC epitaxial layers

    Författare :James P. Doyle; KTH; []
    Nyckelord :;

    Sammanfattning : Metallization for contacts to silicon devices presents amajor challenge as the linewidths are further reduced into thesub-micron regime. Copper germanide due to its relatively lowroom temperature resistivity ( ~ 10 µΩ - cm) has beenexamined as a potential contact metallixation. LÄS MER