Sökning: "high-frequency switching"
Visar resultat 21 - 25 av 43 avhandlingar innehållade orden high-frequency switching.
21. A new Auxiliary Converter Topology with SiC Components for Railway Applications
Sammanfattning : Smaller size and lower weight are always the targets of the power electronic product development. This work introduces two new topologies of auxiliary converters which have the feature of fewer components and fewer number of energy conversion stages comparing with the conventional auxiliary converter used in railway applications. LÄS MER
22. PEEC modeling and verification for broadband analysis of air-core reactors
Sammanfattning : There is an increasing utilization of modern Power Electronic (PE) devices in power systems, in for example, harmonic filters, reactive power compensation, and current limiting applications. The operational frequencies and switching rates of the PE devices now cover up to the megahertz range. LÄS MER
23. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes
Sammanfattning : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER
24. Fabrication and Characterization of Nanocontact Spin-Torque Oscillators
Sammanfattning : The manufacturing of nanocontact-based spin-torque oscillators (NC-STOs)has opened the door for spintronic devices to play a part as active microwaveelements. The NC-STO has the capability of converting a direct current intoa microwave signal, and vice versa, by utilizing the spin transfer torque (STT)in ferromagnetic multilayer systems. LÄS MER
25. Electronic Characterization of CVD Diamond
Sammanfattning : Diamond is a promising material for high-power, high-frequency and hightemperatureelectronics applications, where its outstanding physical propertiescan be fully exploited. It exhibits an extremely high energy gap, veryhigh carrier mobilities, high breakdown field strength, and the highest thermalconductivity of any wide bandgap material. LÄS MER