Sökning: "bipolar transistors"

Visar resultat 1 - 5 av 58 avhandlingar innehållade orden bipolar transistors.

  1. 1. SiGeC Heterojunction Bipolar Transistors

    Författare :Erdal Suvar; KTH; []
    Nyckelord :Silicon-Germanium-Carbon SiGeC ; Heterojunction bipolar transistor HBT ; chemical vapor deposition CVD ; selective epitaxy; non-selective epitaxy; collector design; high-frequency measurement; dopant segregation; thermal stability;

    Sammanfattning : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. LÄS MER

  3. 2. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects

    Författare :Staffan Bruce; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Silicon Germanium; SiGe; Heterojunction Bipolar Transistor; HBT; Large-signal modeling; thermal time constant; low-frequency noise: coherence; transimpedance amplifier; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

    Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER

  4. 3. DC Parameter Extraction and Modeling of Bipolar Transistors

    Författare :Martin Linder; KTH; []
    Nyckelord :bipolar transistors; papameter extraction; test structure; modeling; distributed model; base resistance; emitter resistance; collector resistance;

    Sammanfattning : .... LÄS MER

  5. 4. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors

    Författare :Erik Danielsson; KTH; []
    Nyckelord :silicon carbide; gallium nitride; device simulation; bipolar junction transistor; heterojunction; heterojunction bipolar transistor; current-voltage measurement; capacitance-voltage measurement; self-heating;

    Sammanfattning : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. LÄS MER

  7. 5. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors

    Författare :Martin Sandén; KTH; []
    Nyckelord :bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; polysilicon emitter; high-frequency measurement; low-frequency noise; noise modeling; hydrogen passivation; voltage controlled oscillator VCO ; pha;

    Sammanfattning : .... LÄS MER