Sökning: "capacitance-voltage measurement"

Hittade 5 avhandlingar innehållade orden capacitance-voltage measurement.

  1. 1. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Erik Danielsson; KTH.; [2001]
    Nyckelord :silicon carbide; gallium nitride; device simulation; bipolar junction transistor; heterojunction; heterojunction bipolar transistor; current-voltage measurement; capacitance-voltage measurement; self-heating;

    Sammanfattning : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. LÄS MER

  2. 2. Electrical contacts, Ohmic and Schottky, to 4H-Silicon Carbide for device applications

    Detta är en avhandling från Stockholm : Elektrotekniska system

    Författare :Sang-Kwon Lee; KTH.; [2000]
    Nyckelord :silicon carbice; Ohmic; Schottky contacts; co-evaporation; current-voltage; capacitance-voltage measurement; power device; 4H-SiC; TLM;

    Sammanfattning : .... LÄS MER

  3. 3. Detection and removal of traps at the SiO2/SiC interface

    Detta är en avhandling från Stockholm : Elektrotekniska system

    Författare :Halldor Olafsson; [2004]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

    Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER

  4. 4. Towards Solution Processed Electronic Circuits Using Carbon Nanotubes

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Zhiying Liu; Uppsala universitet.; [2013]

    Sammanfattning : Emerging macro- and flexible electronic applications such as foldable displays, artificial skins, and smart textiles grow rapidly into the market. Solution-processed thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) as the semiconductor channel can offer high performance, low cost and versatility for macro- and flexible electronics. LÄS MER

  5. 5. Investigation of deep levels in bulk GaN

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Tran Thien Duc; Linköpings universitet.; Linköpings universitet.; [2014]

    Sammanfattning : The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska and Tietjen and since then, there has been an intensive development of the field, especially after the ground breaking discoveries concerning growth and p-type doping of GaN done by the 2014 year Nobel Laureates in Physics, Isamu Akasaki, Hiroshi Amano and Shuji Nakamura. GaN and its alloys with In and Al belong to a semiconductor group which is referred as the III-nitrides. LÄS MER