Sökning: "heterojunction"

Visar resultat 1 - 5 av 76 avhandlingar innehållade ordet heterojunction.

  1. 1. SiGeC Heterojunction Bipolar Transistors

    Författare :Erdal Suvar; KTH; []
    Nyckelord :Silicon-Germanium-Carbon SiGeC ; Heterojunction bipolar transistor HBT ; chemical vapor deposition CVD ; selective epitaxy; non-selective epitaxy; collector design; high-frequency measurement; dopant segregation; thermal stability;

    Sammanfattning : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. LÄS MER

  3. 2. Resonant cavity enhanced heterojunction phototransistors

    Författare :Ola Sjölund; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; parallel optical processing; resonant cavity; passivation; strain; uniformity; heterojunction phototransistor;

    Sammanfattning : .... LÄS MER

  4. 3. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors

    Författare :Erik Danielsson; KTH; []
    Nyckelord :silicon carbide; gallium nitride; device simulation; bipolar junction transistor; heterojunction; heterojunction bipolar transistor; current-voltage measurement; capacitance-voltage measurement; self-heating;

    Sammanfattning : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. LÄS MER

  5. 4. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects

    Författare :Staffan Bruce; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Silicon Germanium; SiGe; Heterojunction Bipolar Transistor; HBT; Large-signal modeling; thermal time constant; low-frequency noise: coherence; transimpedance amplifier; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

    Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER

  7. 5. Stability of Bulk-heterojunction blends for Solar Cell Applications

    Författare :Camilla Lindqvist; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; nanostructure; PCBM crystallisation; bulk-heterojunction; Polymer solar cells; stability;

    Sammanfattning : Polymer solar cells are a promising alternative to more traditional silicon solar cells. This is mainly due to the good solubility of organic semiconductors, which makes it possible to produce large-scale and mechanically flexible devices with roll-to-roll processes. LÄS MER