Sökning: "Quantum memories"
Visar resultat 6 - 10 av 10 avhandlingar innehållade orden Quantum memories.
6. Nuclear spin interactions and coherent control in rare-earth-ion-doped crystals for quantum computing
Sammanfattning : This thesis work concerns studies of two rare-earth-ions, praseodymium (Pr3+) and europium (Eu3+), doped into a yttrium orthosilicate (Y2SiO5) crystal for applications in quantum computing. The nuclear spin levels of these ions can have very long coherence times, up to several hours. LÄS MER
7. Efficient Quantum Memories Based on Spectral Engineering of Rare-Earth-Ion-Doped Solids
Sammanfattning : The main aim of the present thesis is to demonstrate the efficient quantum memories for light employing coherent processes in rare-earth-ion-doped crystals. Rare-earth (RE) ions between lanthanum, with atomic number 57, and lutetium, with atomic number 71, have a partly filled 4f shell, which is spatially inside the full shells 5s, 5p, and 6s. LÄS MER
8. Towards Single-Ion Detection and Single-Photon Storage in Rare-Earth-Ion-Doped Crystals
Sammanfattning : Solid materials doped with rare-earth ions are considered an attractive platform for quantum information applications. One of the main reasons for this is the exceptionally long optical and hyperfine coherence times of the 4fn states, due to the shielding provided by the outer lying 5s and 5p electrons. LÄS MER
9. Experimental Verification of Superconductor Digital Circuits
Sammanfattning : Superconducting digital technology based on Rapid Single Flux Quantum logic (RSFQ) offers more than 50 times advantages in speed and $100$ times less power consumption than today's mainstream semiconductor electronics. This technology is attractive for many applications and in particular for Digital Signal Processing (DSP) for multi-user detection in a 3G wireless systems being developed at Chalmers University. LÄS MER
10. Memory Effects on Iron Oxide Filled Carbon Nanotubes
Sammanfattning : In this Licentiate Thesis, the properties and effects of iron and iron oxide filled carbon nanotube (Fe-CNT) memories are investigated using experimental characterization and quantum physical theoretical models. Memory devices based on the simple assembly of Fe-CNTs between two metallic contacts are presented as a possible application involving the resistive switching phenomena of this material. LÄS MER