Sökning: "Henrik Pedersen"
Visar resultat 6 - 10 av 20 avhandlingar innehållade orden Henrik Pedersen.
6. Chemical Vapour Deposition of sp2 Hybridised Boron Nitride
Sammanfattning : The aim of this work was to develop a chemical vapour deposition process and understand the growth of sp2 hybridised Boron Nitride (sp2-BN). Thus, the growth on different substrates together with the variation of growth parameters was investigated in details and is presented in the papers included in this thesis. LÄS MER
7. G-structures and Families of Isotropic Submanifolds in Complex Contact Manifolds
Sammanfattning : We study a generalized twistor correspondence between irreducible G-structures (with torsion in general) on complex manifolds Z and moduli spaces M of deformations of isotropic homogeneous submanifolds X in complex contact manifolds Y.For any irreducible G-structure on a complex manifold M we present an explicit construction of a contact manifold (a generalized twistor space) Y with contact line bundle L and a family F of isotropic submanifolds X in Y having M as its moduli space. LÄS MER
8. Surface-Controlled Chemical Vapor Deposition of Silicon Carbide
Sammanfattning : Polycrystalline cubic silicon carbide, 3C-SiC, has long been investigated in the field of hard coating materials. The typical synthesis method for 3C-SiC coatings is thermal chemical vapor deposition (CVD) using either multicomponent precursors, e.g. methyltrichlorosilane, or a combination of single component precursors, e. LÄS MER
9. CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions
Sammanfattning : Boron-carbon thin films enriched with 10B are potential neutron converting layers for 10B-based solid state neutron detectors given the good neutron absorption cross section of 10B atoms in thin films. The common neutron-transparent base material, Al (melting point 660 °C), limits the deposition temperature and the use of chlorinated precursors forming corrosive by-products such as HCl. LÄS MER
10. Quantum chemical studies of deposition and catalytic surface reactions
Sammanfattning : Quantum chemical calculations have been used to model chemical reactions in epitaxial growth of silicon carbide by chemical vapor deposition (CVD) processes and to study heterogeneous catalytic reactions for methanol synthesis. CVD is a common method to produce high-quality materials and e.g. LÄS MER
