Sökning: "Henrik Pedersen"
Visar resultat 16 - 20 av 20 avhandlingar innehållade orden Henrik Pedersen.
16. Chemical vapour deposition of sp2-hybridised B-C-N materials from organoborons
Sammanfattning : Thin films of sp2-BN are promising materials for graphene and deep-UV optoelectronics. They are typically deposited by thermally activated chemical vapour deposition (CVD) from triethylboron (TEB) and ammonia (NH3) at 1500 °C, albeit in a narrow process window. LÄS MER
17. Fluorinated SiC CVD
Sammanfattning : For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such manner that Si and C finally deposit on the surface creating epitaxial SiC. LÄS MER
18. Cutting Edge Titanium-based CVD Hard Coatings
Sammanfattning : Modern tools for metal cutting applications, such as turning or milling, are typically improved with a thin protective coating. Despite being only a few microns thick, the coating can increase the lifetime of the tool by more than 100 times compared to an uncoated tool. Two different types of techniques are normally used to deposit the coatings, i. LÄS MER
19. Precursors and defect control for halogenated CVD of thick SiC epitaxial layers
Sammanfattning : Silicon carbide (SiC) is a very hard semiconductor material with wide band gap, high breakdown electric field strength, high thermal conductivity and high saturation electron drift velocity making it a promising material for high frequency and high power devices. The performance of electrical devices is strongly dependent on the quality, doping level and thickness of the grown epitaxial layers. LÄS MER
20. Chemical vapour deposition of boron-carbon thin films from organoboron precursors
Sammanfattning : Boron-carbon (BxC) thin films enriched in 10B are potential neutron converting layers for 10Bbased solid-state neutron detectors given the good neutron absorption cross-section of 10B atoms in the thin film. Chemical Vapour Deposition (CVD) of such films faces the challenge that the maximum temperature tolerated by the aluminium substrate is 660 °C and low temperature CVD routes for BxC films are thus needed. LÄS MER