Sökning: "HVPE"
Visar resultat 1 - 5 av 12 avhandlingar innehållade ordet HVPE.
1. Leveraging HVPE for III-V/Si Integration and Mid-Infrared Photonic Device Fabrication
Sammanfattning : This work covers the implementation of highly specialized epitaxial techniques enabled by the near-equilibrium hydride vapor-phase epitaxy growth process in III-V/Si integration for Si-based tandem solar cells and photoelectrochemical reactions, quasi phase matching GaP structures on GaAs substrates, and regrowth of InP:Fe on quantum cascade lasing structures.III-V/Si integration is an important topic in several fields of research with a significant one being solar energy harvesting. LÄS MER
2. Epitaxy, analysis and application of semi-insulating III-V materials
Sammanfattning : Semi-insulating (SI) III-V materials can provide electricalisolation for integration and capacitance minimisation for highspeed operation. Compared to the polyimides, these can offerbetter thermal conduction. Ever since the fabrication of thefirst SI III-V materials, transition metals have been utilisedas deep impurities to impart SI properties. LÄS MER
3. Epitaxy of group III-nitride materials using different nucleation schemes
Sammanfattning : Group III-nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) have direct band gaps with band gap energies ranging from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN) wave-lengths, covering the entire spectral range from 0.7 eV to 6.2 eV upon alloying. LÄS MER
4. Electronic properties of intrinsic defects and impurities in GaN
Sammanfattning : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. LÄS MER
5. Growth of thick GaN layers on sapphire by Hydride Vapour Phase Epitaxy
Sammanfattning : Gallium nitride (GaN) is a wide bandgap material that is already extensively used in industrial production of optoelectronic devices (light emitters) that operate in the blue and ultraviolet wavelength range. GaN is interesting not only because it has a wide bandgap (3. LÄS MER