Sökning: "GaN HEMTs"
Visar resultat 21 - 25 av 33 avhandlingar innehållade orden GaN HEMTs.
21. Oscillator design in III-V technologies
Sammanfattning : The thesis treats the design of low phase noise oscillators/VCOs in GaAs/InGaP HBT and GaN HEMT technologies. The covered topics are: active device modeling, noise characterization, passive structures, phase noise models, simulation/measurement tools, circuit topologies, and design techniques. LÄS MER
22. Nonlinear Microwave Measurement Architectures for Wideband Device Characterization
Sammanfattning : The global surge for ubiquitous mobile communication requiring high speed and high capacity cellular networks has resulted in a golden age for the development of wireless technology. Modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand. LÄS MER
23. Wide Bandgap MMIC Technology
Sammanfattning : Wide bandgap technology for microwave electronics has been an intense area of research during the last decade. With reas of application ranging from base station amplifiers to radar transceivers, this technology has the resources to be the basis for the next generation of high power microwave electronics. LÄS MER
24. P-type and polarization doping of GaN in hot-wall MOCVD
Sammanfattning : The devolopment of group-III nitride semiconductor technology continues to expand rapidly over the last two decades. The indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with a wide bandgap range, spanning from infrared(IR) to deep-ultraviolet (UV), enabling their utilization in optoelectronic industry. LÄS MER
25. Advanced Heterostructure Designs and Recessed Ohmic Contacts for III-Nitride-Based HEMTs
Sammanfattning : Modern III-Nitride (III-N) heterostructures offer high mobility, high electron density, large breakdown voltages and good thermal capabilities. High electron mobility transistors (HEMT) based on III-Ns are therefore ideal for high frequency, high power amplification. The intended applications are within radar and mobile communication. LÄS MER