Sökning: "GaN HEMTs"

Visar resultat 11 - 15 av 33 avhandlingar innehållade orden GaN HEMTs.

1. 11. Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications

   Författare :Björn Hult; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DCIT; SCE; high voltage; isolation; ‘buffer-free’; gate dielectric; GaN HEMT; passivation; DIBL;

   Sammanfattning : The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN, InAlN), allow for the fabrication of high electron mobility transistors (HEMTs). LÄS MER

3. 12. Processing and Characterization of AlGaN/GaN HEMTs on Sapphire

   Författare :Vincent Desmaris; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : .... LÄS MER

4. 13. Optimum GaN HEMT Oscillator Design Targeting Low Phase Noise

   Författare :Mikael Hörberg; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low frequency noise; resonator coupling; cavity resonator; GaN HEMT; MMIC; reflection oscillator; phase noise;

   Sammanfattning : The thesis considers design of low phase noise oscillators, given the boundary condition of the used technology. Important conditions are the power handling of the active device, device noise floor, the quality factor of the resonator, bias settings, and low frequency noise. LÄS MER

5. 14. Advanced III-Nitride Technology for mm-Wave Applications

   Författare :Anna Malmros; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; passivation; InAlN; high frequency performance; GaN; InAlGaN; HEMT; electron trapping;

   Sammanfattning : Within wireless communication, there is a continuously growing need for more bandwidth due to an increasing number of users and data intense services. The development within sensor systems such as radars, is largely driven by the need for increased detection range and robustness. LÄS MER

7. 15. Nonlinear Modeling of FETs for Microwave Switches and Amplifiers

   Författare :Ankur Prasad; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HEMT; symmetry; small-signal model; field-plate.; GaAs; GaN; nonlinear model; trap model; symmetrical model; trap; model;

   Sammanfattning : The exponential growth in wireless systems require rapid prototyping of radio frequency circuits (RF) using computer-aided design (CAD) enabled models. Most of the RF circuits (e.g. switches, amplifiers, mixers, etc. LÄS MER