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Visar resultat 1 - 5 av 23 avhandlingar som matchar ovanstående sökkriterier.

  1. 1. Monolithic Micro- and Millimeter-wave Integrated Circuits in 90 nm CMOS Technology

    Författare :Bahar M. Motlagh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; power divider; CMOS integrated circuits; 90 nm CMOS technology; 60 GHz; microstrip line; Si-MMIC; capacitor; balun; millimeter wave; resistive mixer;

    Sammanfattning : The objective of this work has been to design and characterize microwave components and circuits within a 90 nm RF-CMOS process.The work has been divided into two parts: integration of passive components and design and characterization of several mixer circuits. LÄS MER

  3. 2. Microwave and Millimeter-Wave Monolithic Integrated Circuits in CMOS and GaAs-mHEMT Technologies

    Författare :Bahar M. Motlagh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; power divider; double-slot antenna; 60 GHz; millimeter-wave; GaAs-mHEMT; CMOS integrated circuits; antenna integration; noise measurement; 100 nm mHEMT technology; balun; capacitor; microstrip line; single-ended; 90 nm CMOS technology; single-balanced; resistive mixer; 210 GHz;

    Sammanfattning : The objective of this work has been to design and characterize microwave and millimeter-wave components and circuits within a 90 nm Si-CMOS process and a 100 nm GaAs-mHEMT process. The work is divided in two parts depending on the technology. LÄS MER

  4. 3. Design and Characterization of MMIC IF VGA and Small Signal CMOS Millimeter Wave Amplifiers

    Författare :M. Anowar Masud; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; BCB; CMOS; GaAs; LNA; VGA; MMIC; HEMT;

    Sammanfattning : The main aim of this work is to demonstrate the easibility of designing and characterizing monolithic microwave integrated circuit (MMIC) variable gain amplifiers (VGA) and small signal amplifiers in III-V (GaAs) and 90 nm CMOS technologies, respectively. The VGA is studied at the IFfrequency of 2. LÄS MER

  5. 4. Electrical Characterization of Integrated InAs Nano-Structures

    Författare :Gvidas Astromskas; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; DLTS; Fermi level pinning; epitaxial growth; threshold voltage; nanowire capacitance; overgrowth; Hall mobility; GaSb; InAs;

    Sammanfattning : This thesis analyzes the electrical properties of InAs nano-structures, that are integrated into different materials and geometries. The thesis describes integration related issues of InAs, the epitaxial synthesis of the InAs nano-structures and summarizes experimental techniques for analysis of electrical properties of the integrated structures. LÄS MER

  7. 5. Microwave and millimeter wave CMOS Characterization, modeling, and design

    Författare :Mattias Ferndahl; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; load-pull; microwave; large-signal; silicon; characterization; modeling; balun; LSNA; frequency doubler; millimeter wave; power amplifier; CMOS;

    Sammanfattning : The use of CMOS technologies for microwave and millimeter wave applications has recently been made possible as a result of increased transistor performance. The fT and fmax have, for example, passed 100 GHz at the 130 nm node and 200 GHz at the 65 nm node. LÄS MER