Sökning: "thin films carrier mobility"
Visar resultat 1 - 5 av 11 avhandlingar innehållade orden thin films carrier mobility.
1. Liquid Exfoliation of Molybdenum Disulfide for Inkjet Printing
Sammanfattning : Since the discovery of graphene, substantial effort has been put toward the synthesis and production of 2D materials. Developing scalable methods for the production of high-quality exfoliated nanosheets has proved a significant challenge. LÄS MER
2. Charge Transport in Single-crystalline CVD Diamond
Sammanfattning : Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties, as compared to other (wide bandgap) semiconductors, make it desirable to develop single-crystalline epitaxial diamond films for electronic device and detector applications. LÄS MER
3. Electrical Transport in Nanoparticle Thin Films of Gold and Indium Tin Oxide
Sammanfattning : Electrical transport properties of nanoparticle gold films made by the gas evaporation method were analysed using resistivity measurements. Low temperature electrical transport measurements showed a cross-over from a temperature range dominated by inelastic scattering to a temperature range dominated by elastic scattering, presumably by grain boundaries. LÄS MER
4. Electrical Characterization of Integrated InAs Nano-Structures
Sammanfattning : This thesis analyzes the electrical properties of InAs nano-structures, that are integrated into different materials and geometries. The thesis describes integration related issues of InAs, the epitaxial synthesis of the InAs nano-structures and summarizes experimental techniques for analysis of electrical properties of the integrated structures. LÄS MER
5. Growth and Characterization of Metastable Wide Band-Gap Al1-xInxN Epilayers
Sammanfattning : InN to 6.2 eV for AlN, which opens possibilities to engineer opto-electronic devices operating from infra-red to deep ultra-violet wavelengths. Al1-xInxN with the alloy composition x~0.2 can also be used as a lattice-matched electron confinement layer for GaN based electronic devices. LÄS MER