Sökning: "sublimation growth"

Visar resultat 6 - 10 av 17 avhandlingar innehållade orden sublimation growth.

1. 6. Growth and Structural Characterization of SiC Crystals

   Författare :Marko Tuominen; Roland Madar; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Silicon carbide (SiC) is a promising semiconductor material for a variety of new device applications. These include high-power devices, high-voltage switching applications, hightemperature electronics, and high-power microwave applications. Due to its superior material properties SiC provides many advantages over Si. LÄS MER

3. 7. Silicon Carbide Growth by High Temperature CVD techniques

   Författare :Alexandre Ellison; Hiroyuki Matsunami; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Silicon Carbide (SiC) is a wide band gap semiconductor, which already W. Shockley in 1959 expected to replace silicon owing to its outstanding figures of merit for high-power, high-frequency and high-temperature electronics. LÄS MER

4. 8. Device characteristics of sublimation grown 4H-SiC layers

   Författare :Rafal Ciechonski; Linköpings universitet; []
   Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

   Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

5. 9. CVD growth and material quality control of silicon carbide

   Författare :Jie Zhang; Roland Rupp; Linköpings universitet; []
   Nyckelord :;

   Sammanfattning : SiC has emerged as a promising semiconductor to replace Si in high power, high frequency and high temperature electronics. Thanks 1to the advantageous intrinsic material properties, such as large band gap, high electric breakdown field, high thermal conductivity and highly inert chemical properties, intensified efforts world-wide have been attracted in developing crystal growth technology and device fabrication processes for the SiC components. LÄS MER

7. 10. CVD Growth of Silicon Carbide for High Frequency Applications

   Författare :Urban Forsberg; Erik Janzén; Anne Henry; Christian Brylinski; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Material physics with surface physics; Materialfysik med ytfysik;

   Sammanfattning : Silicon Carbide (SiC) is an important wide band gap semiconductor with outstanding electronic properties. With figures of merit far better than silicon, SiC is believed to replace and outcompete silicon in many applications using high frequencies, high voltage and high temperatures. LÄS MER