Sökning: "semiconductor growth"
Visar resultat 21 - 25 av 203 avhandlingar innehållade orden semiconductor growth.
21. Electron Transport in Semiconductor Nanowires
Sammanfattning : In this thesis, semiconductor nanowires are studied from the point of view of growth and electrical properties. The growth of nanowires is done by chemical beam epitaxy (CBE), an ultra-high vacuum technique allowing a precise control of precursor deposition and low growth rates. LÄS MER
22. Vertical III-V Semiconductor Devices
Sammanfattning : This thesis is based on three projects that deal with vertical III-V semiconductor devices. The work spans over basic research as well as more applied aspects of III-V semiconductor technology. All projects have in common that they rely on advanced epitaxial growth to form the starting material for device fabrication. LÄS MER
23. Towards optical diagnostics and control in aerotaxy semiconductor nanowire growth
Sammanfattning : Aerosol growth of semiconductor nanowires has the potential to dramatically lower the cost of for solar cell production. The objective of the work was to study the growth of aerosol nanoparticles and nanowires, in order to understand the chemical and physical processes involved. LÄS MER
24. Spectroscopy of semiconductor quantum dots
Sammanfattning : Quantum dots in the Si/Ge and InAs/GaAs materials systems are examined by means of photoluminescence. The spectroscopic study of Si/Ge quantum dots has demonstrated two different radiative recombination channels in the type II band alignment: The spatially direct transition inside the dot and the spatially indirect transition across the dot interface. LÄS MER
25. Zinc Oxide Bulk and Nanorods
Sammanfattning : Zinc Oxide (ZnO) has many promising properties for optoelectronics, sensor applications, transparent electronics etc. To mention a few, ZnO has a large exciton binding energy (60 meV at room temperature) and a direct wide bandgap energy of 3.37 eV. In addition, ZnO is piezoelectric and shows more resistance to radiation damage than Si and GaN. LÄS MER