Sökning: "microwave noise pdf"

Visar resultat 1 - 5 av 53 avhandlingar innehållade orden microwave noise pdf.

1. 1. Microwave characterisation of electrodes and field effect transistors based on graphene

   Författare :MICHAEL ANDERSSON; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Graphene; graphene electrodes; microwave amplifiers; noise measurements; microwave FETs; CVD graphene; noise modelling; FBARs.; nanofabrication; subharmonic resistive mixers; small-signal FET modelling;

   Sammanfattning : The isolation of the two-dimensional material graphene, a single hexagonal sheet of carbon atoms, is believed to trigger a revolution in electronics. Theory predicts unprecedented carrier velocities in ideal graphene, from which ultrahigh speed graphene field effect transistors (GFETs) are envisioned. LÄS MER

3. 2. Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices

   Författare :Mattias Thorsell; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; noise modelling; nonlinear measurement; active load-pull; noise measurement; thermal characterisation; AlGaN GaN HEMT; nonlinear modelling;

   Sammanfattning : There is an increasing need for more accurate models taking into account the nonlinearities and memory effects of microwave transistors. The memory effects are especially important for transistor technologies suffering from relatively large low frequency dispersion, such as GaN baed HEMTs. LÄS MER

4. 3. Microwave CMOS VCOs and Front-Ends - using integrated passives on-chip and on-carrier

   Författare :Markus Törmänen; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; VCO; mixer; microwave; LNA; CMOS; front-end; System-on-Package;

   Sammanfattning : The increasing demand for high data rates in wireless communication systems is increasing the requirements on the transceiver front-ends, as they are pushed to utilize more and wider bands at higher frequencies. The work in this thesis is focused on receiver front-ends composed of Low Noise Amplifiers (LNAs), Mixers, and Voltage Controlled Oscillators (VCOs) operating at microwave frequencies. LÄS MER

5. 4. MMIC-based Low Phase Noise Millimetre-wave Signal Source Design

   Författare :Thi Ngoc Do Thanh; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; millimetre-wave; MMIC; low frequency noise; phase noise; GaN HEMT; signal source; D-band; InP DHBT; deposition method.; SiGe BiCMOS; frequency multiplier; VCO; passivation;

   Sammanfattning : Wireless technology for future communication systems has been continuously evolving to meet society’s increasing demand on network capacity. The millimetre-wave frequency band has a large amount of bandwidth available, which is a key factor in enabling the capability of carrying higher data rates. LÄS MER

7. 5. GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers

   Författare :Pirooz Chehrenegar; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gallium nitride GaN ; radio base station receiver; cascode; high linearity; robustness.; cascade; high electron mobility transistor HEMT ; low noise; low noise amplifier;

   Sammanfattning : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. LÄS MER