Sökning: "low-leakage techniques"

Hittade 4 avhandlingar innehållade orden low-leakage techniques.

1. 1. Low-Power Clocking and Circuit Techniques for Leakage and Process Variation Compensation

   Författare :Martin Hansson; Atila Alvandpour; Ram Krishnamurthy; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low-power; resonant clocking; multi-GHz; CMOS; leakage tolerance; low-leakage techniques; process variation; process variation compensation; Electronics; Elektronik;

   Sammanfattning : Over the last four decades the integrated circuit industry has evolved in a tremendous pace. This success has been driven by the scaling of device sizes leading to higher and higher integration capability, which have enabled more functionality and higher performance. LÄS MER

3. 2. Design and Calibration of integrated PLL Frequency Synthesizers

   Författare :Fredrik Jonsson; Håkan Olsson; Juha Kostamovaar; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; Elektronik;

   Sammanfattning : Thanks to its ability to generate a stable yet programmable output frequency, Phase Locked Loop (PLL) frequency synthesizers are found in most modern radio transceivers. All practical PLL implementations suffer from unwanted frequency components such as phasenoise and spurious tones, and since these components affect system performance they must be predicted and minimized. LÄS MER

4. 3. Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications

   Författare :Björn Hult; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DCIT; SCE; high voltage; isolation; ‘buffer-free’; gate dielectric; GaN HEMT; passivation; DIBL;

   Sammanfattning : The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN, InAlN), allow for the fabrication of high electron mobility transistors (HEMTs). LÄS MER

5. 4. Design Space Exploration of Digital Circuits for Ultra-low Energy Dissipation

   Författare :Syed Muhammad Yasser Sherazi; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; ultra low-voltage; ultra low-energy; subthreshold sub-VT ; body biasing; pipelining; unfolding; half-band digital filter.;

   Sammanfattning : The ever expanding market of ultra portable electronic products is compelling the designer to invest major efforts in the development of small and low energy electronic devices. The driving force and benefactors of such devices are (but not limited to) e-health system, sensor network applications, security systems, environmental applications, and home automation systems. LÄS MER