Sökning: "hole concentration"
Visar resultat 16 - 20 av 43 avhandlingar innehållade orden hole concentration.
16. Electrical properties of polycrystalline silicon
Sammanfattning : Polysilicon is used, among other materials, in today's integrated circuits. In this thesis, the structural and electrical properties' of polysilicon thin film resistors have been studied. The aim has been to improve the long-term stability and increase the knowledge concerning grain-boundary related phenomena. LÄS MER
17. Diamond Based Electronics and Valleytronics : An experimental study
Sammanfattning : Diamond is a promising semiconductor material for high power, high voltage, high temperature and high frequency applications due to its remarkable material properties: it has the highest thermal conductivity, it is the hardest material, chemically inert, radiation hard and has the widest transparency in the electromagnetic spectrum. It also exhibits excellent electrical properties like high breakdown field, high mobilities and a wide bandgap. LÄS MER
18. Time-Resolved Optical Properties of Colloidal CdSe-CdS/ZnS Core-Multishell Quantum Dots in Bioimaging
Sammanfattning : Semiconductor quantum dots (QDs) have attracted great attention as a novel fluorescent material in the last twenty years. Their superior optical properties such as high brightness and photostability, broad absorption spectrum, narrow and size-tunable emission spectrum, enable them great application in bioimaging. LÄS MER
19. Dynamics of Excitation Transfer and Charge Separation in Polymeric Semiconductors
Sammanfattning : Dynamics of optically excited electronic states have been studied in solid films and solutions of semiconducting polymers and model compounds. Transient absorption, monitored in the spectral range from 0.9 eV to 2.5 eV with a time resolution of about 100 fs, was the main experimental technique. LÄS MER
20. Epitaxy, analysis and application of semi-insulating III-V materials
Sammanfattning : Semi-insulating (SI) III-V materials can provide electricalisolation for integration and capacitance minimisation for highspeed operation. Compared to the polyimides, these can offerbetter thermal conduction. Ever since the fabrication of thefirst SI III-V materials, transition metals have been utilisedas deep impurities to impart SI properties. LÄS MER