Sökning: "DX center"

Hittade 4 avhandlingar innehållade orden DX center.

  1. 1. Electron Paramagnetic Resonance studies of negative-U centers in AlGaN and SiC

    Författare :Xuan Thang Trinh; Nguyen Tien Son; Erik Janzén; Jan Stehr; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Silicon (Si) is the most commonly used n-type dopant in AlGaN, but the conductivity of Si-doped AlxGa1-xN was often reported to drop abruptly at high Al content (x>0.7) and the reason was often speculated to be due to either compensation by deep levels or self-compensation of the so-called DX (or negative-U) center. LÄS MER

  3. 2. Electron Paramagnetic Resonance Studies of Point Defects in AlGaN and SiC

    Författare :Xuan Thang Trinh; Nguyen Tien Son; Erik Janzén; Mary Ellen Zvanut; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Point defects in semiconductor materials are known to have important influence on the performance of electronic devices. For defect control, knowledge on the model of defects and their properties is required. LÄS MER

  4. 3. Maturation of humoral immune responses : Studies on the effects of antigen type, apoptosis and age

    Författare :Karin Lindroth; Carmen Fernández; Kenneth G.C. Smith; Stockholms universitet; []
    Nyckelord :MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; immunology; B cell; humoral immune response; Immunology; Immunologi;

    Sammanfattning : The humoral immune response is dependent on the formation of antibodies. Antibodies are produced by terminally differentiated B cells, plasma cells. Plasma cells are generated either directly from antigen challenged B cells, memory cells or from cells that have undergone the germinal center (GC) reaction. LÄS MER

  5. 4. Excitonic Effects and Energy Upconversion in Bulk and Nanostructured ZnO

    Författare :Shula Chen; Irina Buyanova; Weimin Chen; Detlev M. Hofmann; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : Zinc Oxide (ZnO), a II-VI wurtzite semiconductor, has been drawing enormous research interest for decades as an electronic material for numerous applications. It has a wide and direct band gap of 3.37eV and a large exciton binding energy of 60 meV that leads to intense free exciton (FX) emission at room temperature. LÄS MER