Avancerad sökning

Hittade 1 avhandling som matchar ovanstående sökkriterier.

1. 1. Electrical properties of thermal oxides on SiC manufactured in an alumina furnace

   Författare :Fredrik Allerstam; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; 6H-SiC; 4H-SiC; Silicon carbide; MOS; TDRC; CV; thermal dielectric relaxation current; interface states;

   Sammanfattning : A process to achieve high inversion channel mobility in 4H-SiC MOSFETs is needed to enable manufacturing of devices for high power applications. In this thesis, investigations on the electrical properties of oxides produced in an alumina furnace are presented. LÄS MER