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Visar resultat 1 - 5 av 9 avhandlingar som matchar ovanstående sökkriterier.

1. 1. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

   Författare :Jun Wu; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

   Sammanfattning : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. LÄS MER

3. 2. Reactors - Circuit Theory and Silicon Integrated Applications

   Författare :Pietro Andreani; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Active Filters; Delay Lines; VCOs; Inductors; Circuit Theory; Capacitors; CMOS; Electronics; Elektronik;

   Sammanfattning : This dissertation deals with reactive components in electric circuits, both as targets for a theoretical circuit analysis, and as devices implemented in silicon processes like CMOS. The frequency behavior of a general electric network is determined by the reactances (i.e. LÄS MER

4. 3. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform

   Författare :Anton E. O. Persson; Nanoelektronik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ferroelectricity; ferroelectric FET; ferroelectric tunnel junction; tunnel field effect transistors; HZO; III-V; nanowire;

   Sammanfattning : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. LÄS MER

5. 4. Investigation of Novel Metal Gate and High-κ Dielectric Materials for CMOS Technologies

   Författare :Jörgen Westlinder; Jörgen Olsson; Stefan Bengtsson; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; metal gate; high-κ dielectics; titanium nitride; zirconium nitride; MOSFET; thin film; tantalum oxide; aluminum nitride; Elektronik; Electronics; Elektronik;

   Sammanfattning : The demands for faster, smaller, and less expensive electronic equipments are basically the driving forces for improving the speed and increasing the packing density of microelectronic components. Down-scaling of the devices is the principal method to realize these requests. LÄS MER

7. 5. Digitally controlled analog multiply-accumulate units

   Författare :Mattias Duppils; Linköpings universitet; []
   Nyckelord :TECHNOLOGY; TEKNIKVETENSKAP;

   Sammanfattning : This thesis is about digitally controlled analog multiplier-accumulator (MAC) units and their utilization in communications applications. These units are implemented as switched-capacitor circuits, designed with switches (MOS transistors), capacitors (MOS transistors), and amplifiers (MOS transistors); using a CMOS technology. LÄS MER