Sökning: "AlInN"
Hittade 3 avhandlingar innehållade ordet AlInN.
1. Localization effects in ternary nitride semiconductors
Sammanfattning : InGaN based blue and near-ultraviolet light emitting diodes and laser diodes have been successfully commercialized for many applications such as general lighting, display backlighting and high density optical storage devices. Despite having a comparably high defect density, these devices are known for their efficient operation, which is attributed to localization in potential fluctuations preventing carriers from reaching the centers of nonradiative recombination. LÄS MER
2. Valence Electron Energy Loss Spectroscopy of III-Nitride Semiconductors
Sammanfattning : This doctorate thesis covers both experimental and theoretical investigations of the optical responses of the group III-nitrides (AlN, GaN, InN) and their ternary alloys. The goal of this research has been to explore the usefulness of valence electron energy loss spectroscopy (VEELS) for materials characterization of group III-nitride semiconductors at the nanoscale. LÄS MER
3. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design
Sammanfattning : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. LÄS MER