Sökning: "Infrared band gap"

Visar resultat 1 - 5 av 14 avhandlingar innehållade orden Infrared band gap.

1. 1. Atomic Scale Design of Clean Energy Materials : Efficient Solar Energy Conversion and Gas Sensing

   Författare :Jawad Nisar; Rajeev Ahuja; Puru Jena; Uppsala universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Photocatalysts; Band gap narrowing; Water dissociation; Density functional theory; Gas sensing; Kaolinite; Physics with spec. in Atomic; Molecular and Condensed Matter Physics; Fysik med inriktning mot atom- molekyl- och kondenserande materiens fysik;

   Sammanfattning : The focus of this doctoral thesis is the atomic level design of photocatalysts and gas sensing materials. The band gap narrowing in the metal oxides for the visible-light driven photocatalyst as well as the interaction of water and gas molecules on the reactive surfaces of metal oxides and the electronic structure of kaolinite has been studied by the state-of-art calculations. LÄS MER

3. 2. Epitaxial growth of semiconductor nanowires

   Författare :Ann Persson; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; materialteknik; nanowires; nanostructures; growth mechanism; Materiallära; Material technology; Halvledarfysik; Semiconductory physics; nanoelectronics; Au; VSS; VLS; surface diffusion; band gap engineering; InP; ternary system; GaAs; heterostructures; InAs; CBE; epitaxy;

   Sammanfattning : This thesis describes the results obtained from investigations carried out on epitaxially grown III-V semiconductor nanowires aimed at improving our understanding of and knowledge on the growth mechanism of nanowires. This is important to be able to control their growth, in order to make future applications possible. LÄS MER

4. 3. Leveraging HVPE for III-V/Si Integration and Mid-Infrared Photonic Device Fabrication

   Författare :Axel Strömberg; Yan-Ting Sun; Sebastian Lourdudoss; Mattias Hammar; Charles Cornet; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; HVPE; III-V Si; Photovoltaics; PEC; MIR; non-linear optics; QPM; QCL; Energiteknik; Energy Technology;

   Sammanfattning : This work covers the implementation of highly specialized epitaxial techniques enabled by the near-equilibrium hydride vapor-phase epitaxy growth process in III-V/Si integration for Si-based tandem solar cells and photoelectrochemical reactions, quasi phase matching GaP structures on GaAs substrates, and regrowth of InP:Fe on quantum cascade lasing structures.III-V/Si integration is an important topic in several fields of research with a significant one being solar energy harvesting. LÄS MER

5. 4. Studies of Charge Transport and Energy Level in Solar Cells Based on Polymer/Fullerene Bulk Heterojunction

   Författare :Abay Gadisa; Olle Inganäs; Vladimir Dyakonov; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Bulk heterojunction; Charge transport; Space charge limited; Bipolar transport; Origin of open circuit voltage; Polymer-fullerene blend; Soft contact lamination; Polarized infrared emission; Physics; Fysik;

   Sammanfattning : π-Conjugated polymers have attracted considerable attention since they are potential candidates for various opto-electronic devices such as solar cells, light emitting iodes, photodiodes, and transistors. Electronic de vices based on conjugated polymers can be easily processed at low temperature using inexpensive technologies. LÄS MER

7. 5. On the Growth and Properties of InAs/Ga1-xInxSb Superlattices and Related Materials

   Författare :Jöran H. Roslund; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; molecular-beam epitaxy; InAs Ga1-xInxSb superlattices; envelope-function calculations; lattice-mismatched semiconductors; Si-doping of Ga1-xInxSb; type-II superlattices;

   Sammanfattning : InAs/Ga1-xInxSb semiconductor superlattices and their constituent materials have been studied theoretically, grown by molecular-beam epitaxy and characterised by various techniques. InAs/Ga1-xInxSb superlattices are interesting for use in far-infrared detectors because of their narrow band gaps. LÄS MER