Sökning: "epitaxy"

Visar resultat 1 - 5 av 181 avhandlingar innehållade ordet epitaxy.

  1. 1. Epitaxy of GaAs-based long-wavelength vertical cavity lasers

    Författare :Carl Asplund; KTH; []
    Nyckelord :gainnas; ingaas; quantum wells; movpe; mocvd; vertical cavity laser; bcsel; long-wavelength; epitaxy; xrd; dbr;

    Sammanfattning : Vertical cavity lasers (VCLs) are of great interest aslow-cost, high-performance light sources for fiber-opticcommunication systems. They have a number of advantages overconventional edge-emitting lasers, including low powerconsumption, efficient fiber coupling and wafer scalemanufacturing/testing. LÄS MER

  3. 2. CVD solutions for new directions in SiC and GaN epitaxy

    Författare :Xun Li; Urban Forsberg; Erik Janzén; Henrik Pedersen; Sebastian Lourdudoss; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; CVD; SiC; GaN; epitaxy;

    Sammanfattning : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. LÄS MER

  4. 3. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition

    Författare :Julius Hållstedt; KTH; []
    Nyckelord :Silicon germanium carbon SiGeC ; Epitaxy; Chemical vapor deposition CVD ; Loading effect; High resolution x-ray diffraction HRXRD ; Hall measurements; Atomic force microscopy AFM .;

    Sammanfattning : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. LÄS MER

  5. 4. Atomic layer epitaxy of copper

    Författare :Per Mårtensson; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Atomic Layer Epitaxy; ALE; copper; ab initio calculations; DFT; CuCl; Cu thd 2; selectivity; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Sammanfattning : The high electric and thermal conductivity of copper has made it to a prime candidate as interconnect material in future integrated circuits. In this thesis, Atomic Layer Epitaxy has been used to deposit thin copper films on a variety of substrates, using both CuCl and Cu(II)2,2,6,6-tetramethyl-3,5-heptanedionate, Cu(thd)2, as precursors and hydrogen as reducing agent. LÄS MER

  7. 5. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

    Författare :Johan Pejnefors; KTH; []
    Nyckelord :chemical vapor deposition CVD ; bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; epitaxy; poly-Si emitter; in situ doping; non-selective epitaxy NSEG ; loading effect; emissivity effect;

    Sammanfattning : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. LÄS MER