Sökning: "monolithic microwave integrated circuit MMIC"

Visar resultat 11 - 15 av 20 avhandlingar innehållade orden monolithic microwave integrated circuit MMIC.

1. 11. Millimeter-wave Transceiver ICs for Ultrahigh Data Rate Communications Using Advanced III-V and Silicon Technologies

   Författare :Sona Carpenter; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; D-band; frequency multiplier; 110-170 GHz; QPSK; demodulator; I Q modulator; transmitter; high-order modulation; receiver; high data rate; single chip; SiGe BiCMOS; QAM; InP DHBT; direct conversion; Gilbert-cell mixer; millimeter-wave communication; 5G; MMIC; point-to-point radio.;

   Sammanfattning : Today’s main driving parameter for radio transceiver research is the ability to provide high capacity while maintaining low cost, small form factor, and low power consumption. Direct conversion architectures (due to the feasibility of monolithic integration) at millimeter-wave (due to wideband availability) have attracted large interest in recent years because of their potential to meet these demands. LÄS MER

3. 12. InP HEMT Technology and Applications

   Författare :Anders Mellberg; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Indium phosphide InP ; cryogenic LNA; high electron mobility transistor HEMT ; metal-insulator-metal capacitor; MODFET; thin film resistor; semiconductor device fabrication; MMIC;

   Sammanfattning : Indium phosphide high electron mobility transistors (InGaAs/InAlAs/InP HEMTs) exhibit the highest cut-off frequencies and the lowest microwave noise figures of all transistor technologies. Both InP HEMT technology and associated circuit demonstrators are therefore interesting to explore further. LÄS MER

4. 13. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

   Författare :Joel Schleeh; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

   Sammanfattning : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. LÄS MER

5. 14. RF and Noise Optimization of Pseudomorphic inP HEMT Technology

   Författare :Mikael Malmkvist; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; fabrication; high electron mobility transistor HEMT ; optimization; Schottky layer; InAlAs; Indium phosphide InP ; MMIC.; noise; pseudomorphic; modeling; InGaAs;

   Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized for the highest frequency and/or the lowest noise applications known to date for analog transistor-based circuits. Hence it is of both scientific and technological interest to explore the InP HEMT for even further improvement in device performance. LÄS MER

7. 15. Broadband Wireless OFDM Systems

   Författare :Maxime Flament; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; channel model; 4th Generation Wireless 4GW ; shadowing; MMIC; WLAN; scenarios; mobile data; OFDM; turbo codes; propagation; license-exempt bands; coding; 60 GHz channel; broadband wireless; interference; Virtual Cellular Network VCN ; front-end;

   Sammanfattning : While the readiness of the telecommunication market and the users' need for broadband mobile data are not currently noticeable, a set of presented megatrends and scenarios suggest that broadband mobile data access will develop quickly in the next ten years. Identification of the potential frequency bands offering cheap and trouble-free wireless infrastructure is therefore an important step towards the definition of new air interfaces. LÄS MER