Sökning: "cryogenic LNA"

Visar resultat 1 - 5 av 12 avhandlingar innehållade orden cryogenic LNA.

  1. 1. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

    Författare :Joel Schleeh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

    Sammanfattning : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. LÄS MER

  3. 2. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

    Författare :Joel Schleeh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; LNA; cryogenic; low noise; DC power dissipation; ALD; GaAs MHEMT; gain fluctuations; InP HEMT;

    Sammanfattning : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. LÄS MER

  4. 3. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers

    Författare :Eunjung Cha; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; stability; noise temperature; InP HEMT; LNA; MMIC;

    Sammanfattning : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub  GHz up to 120 GHz. LÄS MER

  5. 4. THz Vector Beam Measurement System for APEX Instrument SHeFI and Microwave Cryogenic Low Noise Amplifier Design

    Författare :Olle Nyström; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; vector measurements; mm- and submm-wave optics; LNA; radio astronomy; cryogenic amplifier; APEX; InP HEMT; Gaussian beam;

    Sammanfattning : This licentiate thesis describes results of the author’s work on development of THz vector beam measurement system and microwave cryogenic low-noise amplifier.The first part, and the main focus, of the thesis covers the vector beam measurement system for frequency range 210-500 GHz developed to characterize/verify the cold opticsof the APEX instrument SHeFI. LÄS MER

  7. 5. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

    Författare :Eunjung Cha; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; indium channel content; electrical stability.; dc power dissipation; noise temperature; scaling; low-noise amplifier LNA ; InP high-electron mobility transistor InP HEMT ; cryogenic;

    Sammanfattning : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. LÄS MER