Sökning: "diamond CVD"

Visar resultat 1 - 5 av 17 avhandlingar innehållade orden diamond CVD.

  1. 1. Charge Transport in Single-crystalline CVD Diamond

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Markus Gabrysch; Uppsala universitet.; [2010]
    Nyckelord :CVD diamond; wide-bandgap semiconductor; single-crystalline diamond; carrier transport; time-of-flight; drift velocity; mobility; compensation; pair-creation; electronic devices; diamond detector; diamond diode;

    Sammanfattning : Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties, as compared to other (wide bandgap) semiconductors, make it desirable to develop single-crystalline epitaxial diamond films for electronic device and detector applications. LÄS MER

  2. 2. Microengineered CVD Diamond Surfaces Tribology and Applications

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Joakim Andersson; Uppsala universitet.; [2004]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Diamond; DLC; Tribology; Friction; Environment; Microengineering; Materialvetenskap; TECHNOLOGY Materials science; TEKNIKVETENSKAP Teknisk materialvetenskap;

    Sammanfattning : Recent developments in thin film synthesis of diamond have facilitated a host of new technical applications. These are motivated by the many attractive properties of diamond, for example high hardness, chemical inertness, transparency and heat conductivity. Unfortunately, these properties also make it difficult to fashion complex geometries. LÄS MER

  3. 3. Experimental Studies of Charge Transport in Single Crystal Diamond Devices

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Saman Majdi; Uppsala universitet.; [2012]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Single crystal diamond; carrier transport; CVD diamond; time-of-flight; mobility; IR detector; compensation; diamond diode; drift velocity; thermal detector;

    Sammanfattning : Diamond is a promising material for high-power, high-frequency and high- temperature electronics applications, where its outstanding physical properties can be fully exploited. It exhibits an extremely high bandgap, very high carrier mobilities, high breakdown field strength, and the highest thermal conductivity of any wide bandgap material. LÄS MER

  4. 4. Electronic Properties of Diamond

    Detta är en avhandling från Uppsala : Institutionen för teknikvetenskaper

    Författare :Markus Gabrysch; Uppsala universitet.; [2008]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; CVD diamond; wide-bandgap semiconductor; time-of-flight; pair-creation energy; electronic devices; detector; Elektronik; TECHNOLOGY Electrical engineering; electronics and photonics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik; Electricity; Esp The Study Of Transients and Discharges; elektricitetslära; ssk studiet av transienter och urladdning;

    Sammanfattning : Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties compared to other (wide bandgap) semiconductors make it desirable to develop single-crystalline epitaxial diamond films for many electronic device and detector applications. LÄS MER

  5. 5. Electronic Characterization of CVD Diamond

    Detta är en avhandling från Uppsala : Institutionen för teknikvetenskaper

    Författare :Saman Majdi; Uppsala universitet.; [2010]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TECHNOLOGY; TEKNIKVETENSKAP;

    Sammanfattning : Diamond is a promising material for high-power, high-frequency and hightemperatureelectronics applications, where its outstanding physical propertiescan be fully exploited. It exhibits an extremely high energy gap, veryhigh carrier mobilities, high breakdown field strength, and the highest thermalconductivity of any wide bandgap material. LÄS MER