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Hittade 5 avhandlingar som matchar ovanstående sökkriterier.

  1. 1. High growth rate epitaxy of SiC: growth processes and structural quality

    Författare :Mikael Syväjärvi; Robert F. Davis; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Silicon carbide (SiC) is a promising wide-bandgap semiconductor for applications such as high-power devices, high-voltage switches, high-temperature electronics and microwave components. The prospect of using this material is a large driving force for improving the material growth which is still quite immature in comparison with established semiconductor materials (e. LÄS MER

  3. 2. Sublimation Growth of 3C-SiC : From Thick Layers to Bulk Material

    Författare :Valdas Jokubavičius; Mikael Syväjärvi; Rositsa Yakimova; Didier Chaussende; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Silicon carbide (SiC) is a semiconductor material which holds high promises for various device applications. It can be obtained in different crystal structures called polytypes. The most common ones are hexagonal (6H- and 4H-SiC) and cubic (3C-SiC) silicon carbide. LÄS MER

  4. 3. Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

    Författare :Yuchen Shi; Jianwu W. Sun; Rositsa Yakimova; Mikael Syväjärvi; Gholamreza Yazdi; Didier Chaussende; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H- or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si–C bilayers along the c-axis crystal direction. LÄS MER

  5. 4. Sublimation Growth and Performance of Cubic Silicon Carbide

    Författare :Remigijus Vasiliauskas; Rositza Yakimova; Mikael Syväjärvi; Didier Chaussende; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : Silicon carbide (SiC) is a wide band gap semiconductor satisfying requirements to replace silicon in devices operating at high power and high frequency at high temperature, and in harsh environments. Hexagonal polytypes of SiC, such as 6H-SiC and 4H-SiC are available on the power device markets. LÄS MER

  7. 5. Growth and Characterization of AlN : From Nano Structures to Bulk Material

    Författare :Gholamreza Yazdi; Rositza Yakimova; Mikael Syväjärvi; Zlatko Sitar; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Physics; Fysik;

    Sammanfattning : Aluminum nitride (AlN) exhibits a large direct band gap, 6.2 eV, and is thus suitable forsolid state white-light-emitting devices. It is capable in spintronics because of its high Curietemperature if doped with transition metals. LÄS MER