Sökning: "Valdas Jokubavičius"
Hittade 1 avhandling innehållade orden Valdas Jokubavičius.
1. Sublimation Growth of 3C-SiC : From Thick Layers to Bulk Material
Sammanfattning : Silicon carbide (SiC) is a semiconductor material which holds high promises for various device applications. It can be obtained in different crystal structures called polytypes. The most common ones are hexagonal (6H- and 4H-SiC) and cubic (3C-SiC) silicon carbide. LÄS MER
Resultatsidor:
1