Sökning: "Heterostructure"

Visar resultat 11 - 15 av 109 avhandlingar innehållade ordet Heterostructure.

  1. 11. Heterostructure Diodes for Millimeter Wave Power Generation

    Författare :Hans Grönqvist; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Single barrier varactor diode; AlSb barrier; InAs substrate; high frequencies; Resonant Tunneling Diode;

    Sammanfattning : This thesis deals with two types of heterostructure diodes namely the Resonant Tunneling Diode (RTD) and the Single barrier varactor diode (SBV). The RTD is a device for high frequency generation either as a negative reistance oscillators or as a multiplier. Different means to reach high frequencies are outlined. LÄS MER

  3. 12. Antimonide Heterostructure Nanowires - Growth, Physics and Devices

    Författare :Mattias Borg; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; GaSb; InSb; epitaxy; Nanowires; antimonides; tunnel field effect transistors; tunnel diode; InAsSb; Fysicumarkivet A:2012:Borg;

    Sammanfattning : Abstract in UndeterminedThis thesis investigates the growth and application of antimonide heterostructure nanowires for low-power electronics. In the first part of the thesis, GaSb, InSb and InAsSb nanowire growth is presented, and the distinguishing features of the growth are described. LÄS MER

  4. 13. Metall organic vapour phase epitaxy for advanced III-V devices

    Författare :Nils Nordell; Sture Petersson; Gunnar Landgren; Ferdinand Scholz; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metalorganic vapour phase epitaxy MOVPE ; III-V compound semiconductors; epitaxial uniformity; p-type doping profiles; epitaxial regrowth; chlorine-MOVPE; buried heterostructure laser; heterostructure bipolar transistor; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. LÄS MER

  5. 14. InP-based heterostructure field effect transistors and millimeter wave integrated circuits

    Författare :Anders Mellberg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; passive components; InP; MIM capacitor; high electron mobility transistor HEMT ; monolithic microwave integrated circuit MMIC ; CPW; TL; 2DEG; heterostructure field effect transistor HFET ; spiral inductor; modeling; wideband LNA; coplanar waveguides; microstrip transmission line; modulation doped field effect transistor MODFET ; III-V semiconductor; low noise amplifier; compound semiconductor; thin film resistor TFR ; indium phosphide; low noise amplifier;

    Sammanfattning : .... LÄS MER

  7. 15. Heterostructure Field-Effect Transistors for Millimeter Wave Applications

    Författare :Christer Karlsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : This thesis deals with the development of low-noise heterostructure field-effect transistors (HFETs) on III-V materials. The emphasis is on devices for high gain and low noise applications. Fabrication processes have been developed and transistors have been fabricated and characterized. LÄS MER