Sökning: "heterostructure field effect transistor HFET"

Visar resultat 1 - 5 av 6 avhandlingar innehållade orden heterostructure field effect transistor HFET.

  1. 1. Heterostructure Field Effect Transistors and Millimeter Wave Integrated Circuits

    Författare :Niklas Rorsman; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; subharmonic; resistive mixer; Modulation Doped Field Effect Transistor MODFET ; heterostructure field effect transistor HFET ; monolithic microwave integrated circuits MMIC ; frequency multiplier; amplifier; III-V semiconductor; small signal model; electron beam lithography; High Electron Mobility Transistor HEMT ; large signal model; pseudomorphic;

    Sammanfattning : This thesis deals with the research and development of HFETs and HFET based circuits. One of the main aims of the work presented in this thesis has been to develop processes to fabricate state of the art devices and circuits. LÄS MER

  3. 2. InP-based heterostructure field effect transistors and millimeter wave integrated circuits

    Författare :Anders Mellberg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; passive components; InP; MIM capacitor; high electron mobility transistor HEMT ; monolithic microwave integrated circuit MMIC ; CPW; TL; 2DEG; heterostructure field effect transistor HFET ; spiral inductor; modeling; wideband LNA; coplanar waveguides; microstrip transmission line; modulation doped field effect transistor MODFET ; III-V semiconductor; low noise amplifier; compound semiconductor; thin film resistor TFR ; indium phosphide; low noise amplifier;

    Sammanfattning : .... LÄS MER

  4. 3. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

    Författare :Stefan Davidsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al2< sub>O3< sub>; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

    Sammanfattning : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. LÄS MER

  5. 4. Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy

    Författare :Stefan Davidsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MBE; 2DEG; heterostructure field effect transistor; molecular beam epitaxy; epitexial growth; GaN; III-nitride; AlGaN; two dimensional electron gas; HFET; AlN;

    Sammanfattning : .... LÄS MER

  7. 5. Experimentally Based HFET Modeling for Microwave and Millimeter Wave Applications

    Författare :Mikael Garcia; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MODFET; soft-breakdown; cold FET; large-signal; source balance; SDHT; dispersion; noise figure; temperature noise model; small-signal; TEGFET; direct extraction; Chalmers model; noise parameters; modeling; HEMT; HFET; noise;

    Sammanfattning : Transistor models are very important in the design of Monolithic Microwave Integrated Circuits (MMICs). Circuit simulations based on accurate transistor models are one of the keys to high circuit yield. Transistor models can also be used to trace problems in the device fabrication processes. LÄS MER