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1. III-V Nanowires for High-Speed Electronics
Sammanfattning : III-V compound materials have long been used in RF applications in high-electron-mobility-transistors (HEMTs) and bipolar-junction-transistors (BJTs). Now, III-V is also being viewed as a material candidate for replacing silicon in the n-channel in CMOS processes for increased drive currents and reduced power consumption in future nodes. LÄS MER
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