Sökning: "dopant segregation"

Visar resultat 1 - 5 av 9 avhandlingar innehållade orden dopant segregation.

1. 1. Proton conductivity of lanthanum and barium zirconate: Microscale aspects on first-principles basis

   Författare :Joakim Nyman; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; first principles; trapping; conductivity; grain boundary; segregation; pyrochlore; space charge; solid oxide fuel cell; depletion; electrolyte; La2Zr2O7; oxygen vacancy; BaZrO3; proton; DFT; point defect; perovskite; acceptor;

   Sammanfattning : Fuel cells are devices which convert chemical energy into electrical energy cleanly and efficiently. Development of fuel cells compatible with hydrocarbon fuels would make more efficient use of present fossil and renewable fuels, and also enable progress towards a future hydrogen economy. LÄS MER

3. 2. SiGeC Heterojunction Bipolar Transistors

   Författare :Erdal Suvar; KTH; []
   Nyckelord :Silicon-Germanium-Carbon SiGeC ; Heterojunction bipolar transistor HBT ; chemical vapor deposition CVD ; selective epitaxy; non-selective epitaxy; collector design; high-frequency measurement; dopant segregation; thermal stability;

   Sammanfattning : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. LÄS MER

4. 3. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

   Författare :Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

   Sammanfattning : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER

5. 4. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

   Författare :Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

   Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

7. 5. Transparent Conductive Tin Doped Indium Oxide : Characterisation of Thin Films Made by Sputter Deposition with Silver Additive and by Spin Coating from Nanoparticle Dispersions

   Författare :Annette Hultåker; Peter van Nijnatten; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Materialvetenskap; Materials science; Teknisk materialvetenskap; Solid State Physics; fasta tillståndets fysik;

   Sammanfattning : Thin films of tin doped indium oxide (ITO) were prepared by two different methods: by sputter deposition with silver additive and by spin coating of a nanoparticle dispersion.ITO films doped with ≤ 20 at% of silver were prepared either as homogenous blends of ITO and silver or as intermixed layers. LÄS MER