Sökning: "Schottky barrier"

Visar resultat 1 - 5 av 48 avhandlingar innehållade orden Schottky barrier.

  1. 1. Junction barrier schottky rectifiers in silicon carbide

    Författare :Fanny Dahlquist; KTH; []
    Nyckelord :Silicon carbide; JBS rectifier; Junction Barrier Schottky JBS ; Schottky rectifieer; Power rectifier; Unipolar devices; Punch-through design;

    Sammanfattning : .... LÄS MER

  3. 2. Junction Barrier Schottky Rectifiers in Silicon Carbide

    Författare :Fanny Dahlquist; KTH; []
    Nyckelord :silicon carbide; JBS rectifier; Junction Barrier Schottky JBS ; Schottky rectifier; MPS rectifier; power rectifier; punch-through design; power loss; high blocking voltage;

    Sammanfattning : .... LÄS MER

  4. 3. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Författare :Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

    Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

  5. 4. Schottky Contacs on Silicon Nanowires

    Författare :Johan Piscator; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Silicon On Insulator SOI ; Schottky contacts; Palladium silicide; Silicon nanowire;

    Sammanfattning : This thesis demonstrates the effect of charge on Schottky barrier height for metal contacts at the end surfaces of silicon nanowires. It is shown, by measurements and analytical models, how the effective electron barrier is lowered by a positive charge introduced into an oxide embedding the wire. LÄS MER

  7. 5. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER