Sökning: "Schottky diode"

Visar resultat 1 - 5 av 36 avhandlingar innehållade orden Schottky diode.

  1. 1. Advanced Schottky Diode Receiver Front-Ends for Terahertz Applications

    Detta är en avhandling från Chalmers University of Technology

    Författare :Peter Sobis; Chalmers tekniska högskola.; Chalmers University of Technology.; Chalmers tekniska högskola.; Chalmers University of Technology.; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Elektroteknik; elektronik och fotonik; Electrical engineering; electronics and photonics; Elektronik; Electronics; Elektroteknik; Electrical engineering; terahertz technology; terahertz electronics; submillimetre wave technology; heterodyne receivers; Schottky diodes; subharmonic mixers; sideband separating mixers; radiometers; phase shifters; differential phase shifters; S-parameter measurements; TRL-calibration; frequency converters; down converters;

    Sammanfattning : This thesis treats the development of high frequency circuits for increased functionality of terahertz receiver front-ends based on room temperature Schottky diode technology. This includes the study of novel circuit integration schemes, packaging concepts as well as new measurement and characterisation techniques. LÄS MER

  2. 2. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Detta är en avhandling från Stockholm : KTH

    Författare :Zhen Zhang; KTH.; [2008]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik;

    Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

  3. 3. Silicon Carbide Microwave Devices

    Detta är en avhandling från Chalmers University of Technology

    Författare :Joakim Eriksson; Chalmers tekniska högskola.; Chalmers University of Technology.; [2002]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Elektroteknik; elektronik och fotonik; Electrical engineering; electronics and photonics; Silicon Carbide; wide band gap devices; MESFET; Schottky diode; SBD; microwave devices; physical simulations; high-power microwave devices; diode mixer; resistive mixer;

    Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

  4. 4. Modelling of Terahertz Planar Schottky Diodes

    Detta är en avhandling från Chalmers University of Technology

    Författare :Aik Yean Tang; Chalmers tekniska högskola.; Chalmers University of Technology.; Chalmers tekniska högskola.; Chalmers University of Technology.; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Elektronik; Electronics; Current crowding; Electromagnetic; Electro-thermal; Frequency multipliers; Gallium Arsenide; Geometric modelling; High-power frequency multiplier; Proximity effect; Schottky diodes; Skin effect; Submillimetre wave generation and detection; S-parameter extraction;

    Sammanfattning : This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses of the geometry- dependent parasitics and the diode chip thermal management. Moving towards higher operating frequencies, the electromagnetic couplings pose significant limitations on the diode performance. LÄS MER

  5. 5. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Jang-Kwon Lim; KTH.; [2015]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER