Sökning: "MOS capacitors"

Visar resultat 1 - 5 av 17 avhandlingar innehållade orden MOS capacitors.

1. 1. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

   Författare :Jun Wu; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

   Sammanfattning : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. LÄS MER

3. 2. Reactors - Circuit Theory and Silicon Integrated Applications

   Författare :Pietro Andreani; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Active Filters; Delay Lines; VCOs; Inductors; Circuit Theory; Capacitors; CMOS; Electronics; Elektronik;

   Sammanfattning : This dissertation deals with reactive components in electric circuits, both as targets for a theoretical circuit analysis, and as devices implemented in silicon processes like CMOS. The frequency behavior of a general electric network is determined by the reactances (i.e. LÄS MER

4. 3. Characterization and modeling of electrically active point defects in silicon/silcon dioxide structures

   Författare :Mats O. Andersson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOS capacitors; electro-optical techniques; ;

   Sammanfattning : .... LÄS MER

5. 4. Electrical Characterization of III-V Nanostructure

   Författare :Aein Shiri Babadi; Institutionen för elektro- och informationsteknik; []
   Nyckelord :High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

   Sammanfattning : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. LÄS MER

7. 5. Detection and removal of traps at the SiO2/SiC interface

   Författare :Halldor Olafsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

   Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER