Sökning: "InGaAs"

Visar resultat 1 - 5 av 54 avhandlingar innehållade ordet InGaAs.

  1. 1. Novel Terahertz Emitters and Detectors: InGaAs Slot Diodes and InAs Self-Switching Diodes

    Detta är en avhandling från Chalmers University of Technology

    Författare :Andreas Westlund; Chalmers tekniska högskola.; Chalmers University of Technology.; [2013]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; slot diode; self-switching diode; InAs; InGaAs; zero-bias diode;

    Sammanfattning : Two novel types of diodes for emission and detection of THz radiation have been investigated. The diodes are based on high electron mobility III-V heterostructures. Both diodes are aimed for room-temperature operation, for which there is a demand for new THz technology. For emission, slot diodes based on an InGaAs heterostructure were studied. LÄS MER

  2. 2. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

    Detta är en avhandling från Chalmers University of Technology

    Författare :Malin Borg; Chalmers tekniska högskola.; Chalmers University of Technology.; [2007]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Övrig elektroteknik; elektronik och fotonik; Other electrical engineering; electronics and photonics; High electron mobility transistor HEMT ; InP; InGaAs; InAs; AlSb; pseudomorphic; metamorphic; Schottky layer; gate length; drain bias;

    Sammanfattning : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. LÄS MER

  3. 3. Self-Switching Diodes for Zero-Bias Terahertz Detection

    Detta är en avhandling från Chalmers University of Technology

    Författare :Andreas Westlund; Chalmers tekniska högskola.; Chalmers University of Technology.; [2015]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InAs; SSD; self-switching diode; graphene; InGaAs; zero-bias; detector; terahertz; noise-equivalent power;

    Sammanfattning : The self-switching diode (SSD) has been investigated as a potential terahertz detector in recent years. The SSD accomplishes a non-linear current-voltage relation through a field-effect, which enables detection at zero bias from microwave up to terahertz frequencies. In this work, SSDs were realised in two new materials; InAs and graphene. LÄS MER

  4. 4. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    Detta är en avhandling från Department of Electrical and Information Technology, Lund University

    Författare :Jun Wu; Lunds universitet.; Lund University.; [2016]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Sammanfattning : Popular Abstract in English Since 1947 when the first transistor was invented, electronics was transited into an unprecedented era. Different from a resistor that only has two terminals with the applied voltage and flowing current always obeying Ohm's law, a transistor has the third terminal in between, called "gate", which is made by, for metal-oxide-semiconductor field effect transistors (MOSFETs), an oxide layer sandwiched between the metal electrode and the semiconductor channel. LÄS MER

  5. 5. RF and Noise Optimization of Pseudomorphic inP HEMT Technology

    Detta är en avhandling från Chalmers University of Technology

    Författare :Mikael Malmkvist; Chalmers tekniska högskola.; Chalmers University of Technology.; [2006]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Elektroteknik; elektronik och fotonik; Electrical engineering; electronics and photonics; Indium phosphide InP ; InGaAs; InAlAs; high electron mobility transistor HEMT ; pseudomorphic; fabrication; modeling; noise; optimization; Schottky layer; MMIC.;

    Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized for the highest frequency and/or the lowest noise applications known to date for analog transistor-based circuits. Hence it is of both scientific and technological interest to explore the InP HEMT for even further improvement in device performance. LÄS MER